(RTTNews) – Samsung Electronics Co. has launched mass production of 3 nanometer or nm chips, considered the most advanced chips in the world. In its approach, the South Korean technology major beats its rival Taiwan Semiconductor Manufacturing Co., the world’s largest chipmaker, which is said to be building one.
In a statement, the semiconductor technology company said it has started production of chips using 3nm process technology applying Gate-All-Around or GAA transistor architecture.
Samsung, which had promised 3nm in the first half of 2022, has now announced that it will start with 3nm semiconductors for high-performance and specialized low-power computing applications and plans to expand to mobile processors.
Multi-Bridge-Channel FET or MBCFET, Samsung’s first-implemented GAA technology, challenges the performance limitations of FinFET. It improves energy efficiency by reducing the supply voltage level, while improving performance by increasing drive current capacity.
With GAA architecture, Samsung’s 3nm products are said to reduce power consumption by up to 45%, improve performance by 23% and reduce area by 16% compared to 5nm chip process. The second-generation 3nm process is expected to reduce power consumption by up to 50%, improve performance by 30%, and reduce area by 35%.
Siyoung Choi, President and Head of Foundry Business, Samsung Electronics, said, “Samsung has grown rapidly as we continue to demonstrate leadership in applying next-generation technologies to manufacturing, such as the foundry industry’s first High-K Metal Gate, FinFET, as well as as an EUV. We seek to maintain this leadership with the world’s first 3nm process with the MBCFET. We will continue to actively innovate in the development of competitive technologies and build processes that help accelerate technology maturity.
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